onsemi NVH Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin TO-247 NVHL040N120SC1
- RS Stock No.:
- 202-5745
- Mfr. Part No.:
- NVHL040N120SC1
- Brand:
- onsemi
This image is representative of the product range
Subtotal (1 pack of 2 units)*
$65.32
(exc. GST)
$71.86
(inc. GST)
FREE delivery for orders over $80.00 ex GST
- 576 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 112 | $32.66 | $65.32 |
| 114 - 224 | $31.845 | $63.69 |
| 226 + | $31.35 | $62.70 |
*price indicative
- RS Stock No.:
- 202-5745
- Mfr. Part No.:
- NVHL040N120SC1
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 174W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.25mm | |
| Standards/Approvals | No | |
| Width | 4.82mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 174W | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.25mm | ||
Standards/Approvals No | ||
Width 4.82mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-3L
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