Vishay TrenchFET Gen IV Type N-Channel MOSFET, 92.5 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 25 units)*

$38.475

(exc. GST)

$42.325

(inc. GST)

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Units
Per unit
Per Pack*
25 - 725$1.539$38.48
750 - 1475$1.50$37.50
1500 +$1.477$36.93

*price indicative

RS Stock No.:
200-6855
Mfr. Part No.:
SiSS22LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

92.5A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

3.3mm

Width

3.3 mm

Length

3.3mm

Automotive Standard

No

The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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