Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3

RS Stock No.:: 188-4999
Mfr. Part No.:: SISF02DN-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3

On back order for despatch 11/12/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Pack of 5)

$2.358

(exc. GST)

$2.594

(inc. GST)

Units	Per unit	Per Pack*
5 - 745	$2.358	$11.79
750 - 1495	$2.298	$11.49
1500 +	$2.264	$11.32

*price indicative

RS Stock No.:: 188-4999
Mfr. Part No.:: SISF02DN-T1-GE3
Brand:: Vishay

Datasheet SISF02DN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	25 V
Package Type	PowerPAK 1212-8SCD
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	69.4 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +16 V
Number of Elements per Chip	2
Width	3.4mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	3.4mm
Height	0.75mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3

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