Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8

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Subtotal (1 pack of 25 units)*

$43.60

(exc. GST)

$47.95

(inc. GST)

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Units
Per unit
Per Pack*
25 - 725$1.744$43.60
750 - 1475$1.702$42.55
1500 +$1.676$41.90

*price indicative

RS Stock No.:
200-6843
Mfr. Part No.:
SIJ150DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

3.4mm

Width

0.98 mm

Length

3.4mm

Automotive Standard

No

The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low Qg and Qoss reduce power loss and improve efficiency

Flexible leads provide resilience to mechanical stress

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

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