onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 195-2666
- Mfr. Part No.:
- NVB190N65S3F
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 800 units)*
$2,571.20
(exc. GST)
$2,828.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | $3.214 | $2,571.20 |
| 1600 - 2400 | $3.134 | $2,507.20 |
| 3200 + | $3.086 | $2,468.80 |
*price indicative
- RS Stock No.:
- 195-2666
- Mfr. Part No.:
- NVB190N65S3F
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 162W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 4.58mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 162W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 4.58mm | ||
Automotive Standard AEC-Q101 | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
Lower switching loss
PPAP Capable
Typ. RDS(on) = 158 mΩ
Application
HV DC/DC converter
Related links
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