Dual N-Channel MOSFET, 25 A, 80 V, 8-Pin DFN onsemi NVMFD6H852NLT1G
- RS Stock No.:
- 195-2561
- Mfr. Part No.:
- NVMFD6H852NLT1G
- Brand:
- onsemi
3000 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 30)
$1.387
(exc. GST)
$1.526
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 360 | $1.387 | $41.61 |
| 390 - 720 | $1.352 | $40.56 |
| 750 + | $1.331 | $39.93 |
*price indicative
- RS Stock No.:
- 195-2561
- Mfr. Part No.:
- NVMFD6H852NLT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 31.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 3.2 W |
| Transistor Configuration | Dual |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Width | 5.1mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Length | 6.1mm |
| Automotive Standard | AEC-Q101 |
| Height | 1.05mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
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