Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1G
- RS Stock No.:
- 195-2670
- Mfr. Part No.:
- NVMFD6H840NLWFT1G
- Brand:
- onsemi
4485 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 1500)
$1.979
(exc. GST)
$2.177
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | $1.979 | $2,968.50 |
| 3000 - 4500 | $1.929 | $2,893.50 |
| 6000 + | $1.90 | $2,850.00 |
*price indicative
- RS Stock No.:
- 195-2670
- Mfr. Part No.:
- NVMFD6H840NLWFT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 74 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 8.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 3.1 W |
| Transistor Configuration | Dual |
| Maximum Gate Source Voltage | ±20 V |
| Length | 6.1mm |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 2 |
| Width | 5.1mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.05mm |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
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