onsemi Dual 2 N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN NVMFD6H852NLWFT1G

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Subtotal (1 pack of 30 units)*

$30.60

(exc. GST)

$33.60

(inc. GST)

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Units
Per unit
Per Pack*
30 - 360$1.02$30.60
390 - 720$0.995$29.85
750 +$0.979$29.37

*price indicative

Packaging Options:
RS Stock No.:
195-2556
Mfr. Part No.:
NVMFD6H852NLWFT1G
Brand:
onsemi
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Brand

onsemi

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

31.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.2W

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

800mV

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

+175°C

Transistor Configuration

Dual

Width

5.1mm

Length

6.1mm

Standards/Approvals

No

Height

1.05mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection

PPAP Capable

These Devices are Pb−Free

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