- RS Stock No.:
- 188-5126
- Mfr. Part No.:
- SUP40012EL-GE3
- Brand:
- Vishay
110 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$3.424
(exc. GST)
$3.766
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
5 - 10 | $3.424 | $17.12 |
15 - 20 | $3.338 | $16.69 |
25 + | $3.286 | $16.43 |
*price indicative
- RS Stock No.:
- 188-5126
- Mfr. Part No.:
- SUP40012EL-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel 40 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency
Maximum 175 °C junction temperature
Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 150 A |
Maximum Drain Source Voltage | 40 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 130 nC @ 10 V |
Length | 10.51mm |
Width | 4.65mm |
Height | 9.01mm |
Forward Diode Voltage | 1.5V |
Minimum Operating Temperature | -55 °C |
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