Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$26.75
(exc. GST)
$29.40
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 40 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 495 | $5.35 | $26.75 |
| 500 - 995 | $5.22 | $26.10 |
| 1000 + | $5.142 | $25.71 |
*price indicative
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | Triple Die | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.79V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Transistor Configuration | Common Drain | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 3 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type Triple Die | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.79V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Transistor Configuration Common Drain | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 3 | ||
Automotive Standard AEC-Q101 | ||
Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET.
Optimized triple die package
TrenchFET® power MOSFET
Related links
- Vishay 3 N/P-Channel MOSFET 30 A 200 (Channel 3) V 40 (Channel 2) V, 10-Pin Triple Die
- Vishay Dual N-Channel MOSFET 60 A 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
- Texas Instruments TUSB564IRNQT 4-Channel USB 3.1 40 Pin-Pin WQFN
- Vishay N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ146ELP-T1_GE3
- Vishay N-Channel 40 V N-Channel MOSFET 40 V, 8-Pin PowerPAK 8 x 8LR SQJQ148ER-T1_GE3
- Vishay P-Channel 40 V P-Channel MOSFET 40 V, 4-Pin PowerPAK 8 x 8L SQJQ141EL-T1_GE3
- Vishay N-Channel 40 V N-Channel MOSFET 40 V, 8-Pin PowerPAK 8 x 8LR SQJQ144AER-T1_GE3
- Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
