Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

$4,029.00

(exc. GST)

$4,431.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$1.343$4,029.00
6000 - 9000$1.309$3,927.00
12000 +$1.289$3,867.00

*price indicative

RS Stock No.:
188-4891
Mfr. Part No.:
SiSF20DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

69.4W

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Common Drain

Height

0.75mm

Width

3.4 mm

Standards/Approvals

No

Length

3.4mm

Number of Elements per Chip

2

Automotive Standard

No

Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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