Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3

RS Stock No.:: 188-4890
Mfr. Part No.:: SISF02DN-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3

On back order for despatch 09/09/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 3000)

$1.036

(exc. GST)

$1.14

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$1.036	$3,108.00
6000 - 9000	$1.011	$3,033.00
12000 +	$0.995	$2,985.00
*price indicative

RS Stock No.:: 188-4890
Mfr. Part No.:: SISF02DN-T1-GE3
Brand:: Vishay

Technical data sheets

Datasheet SISF02DN-T1-GE3

Legislation and Compliance

Product Details

Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	25 V
Package Type	PowerPAK 1212-8SCD
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	69.4 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +16 V
Maximum Operating Temperature	+150 °C
Length	3.4mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Width	3.4mm
Number of Elements per Chip	2
Height	0.75mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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