N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

RS Stock No.:: 188-4960
Mfr. Part No.:: SiSS92DN-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

On back order for despatch 29/03/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Pack of 10)

$1.474

(exc. GST)

$1.621

(inc. GST)

Units	Per unit	Per Pack*
10 - 740	$1.474	$14.74
750 - 1490	$1.452	$14.52
1500 +	$1.416	$14.16

*price indicative

RS Stock No.:: 188-4960
Mfr. Part No.:: SiSS92DN-T1-GE3
Brand:: Vishay

Datasheet SiSS92DN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12.3 A
Maximum Drain Source Voltage	250 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Length	3.3mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	10.4 nC @ 10 V
Number of Elements per Chip	1
Width	3.3mm
Height	0.78mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

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