N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB Vishay SIHP22N60EF-GE3
- RS Stock No.:
- 188-4878
- Mfr. Part No.:
- SIHP22N60EF-GE3
- Brand:
- Vishay
4970 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$4.181
(exc. GST)
$4.599
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | $4.181 | $209.05 |
| 100 - 150 | $4.076 | $203.80 |
| 200 + | $4.013 | $200.65 |
*price indicative
- RS Stock No.:
- 188-4878
- Mfr. Part No.:
- SIHP22N60EF-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
EF Series Power MOSFET With Fast Body Diode.
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 182 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 179 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Width | 4.65mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 10.51mm |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 9.01mm |
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