Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

$128.075

(exc. GST)

$140.875

(inc. GST)

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  • 25 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
25 - 25$5.123$128.08
50 - 75$4.995$124.88
100 +$4.918$122.95

*price indicative

RS Stock No.:
188-4876
Mfr. Part No.:
SIHG21N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

SiHG21N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

235mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

32W

Maximum Operating Temperature

150°C

Height

20.82mm

Length

15.87mm

Standards/Approvals

No

Width

5.31 mm

Automotive Standard

No

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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