Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3
- RS Stock No.:
- 188-4873
- Mfr. Part No.:
- SIHD186N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 reel of 2000 units)*
$4,488.00
(exc. GST)
$4,936.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | $2.244 | $4,488.00 |
| 10000 + | $2.17 | $4,340.00 |
*price indicative
- RS Stock No.:
- 188-4873
- Mfr. Part No.:
- SIHD186N60EF-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 201 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.25mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 201 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.25mm | ||
EF Series Power MOSFET With Fast Body Diode.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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