N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 onsemi NTPF110N65S3HF
- RS Stock No.:
- 186-1441
- Mfr. Part No.:
- NTPF110N65S3HF
- Brand:
- onsemi
1 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 2)
$9.195
(exc. GST)
$10.115
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 248 | $9.195 | $18.39 |
| 250 - 498 | $8.975 | $17.95 |
| 500 + | $8.845 | $17.69 |
*price indicative
- RS Stock No.:
- 186-1441
- Mfr. Part No.:
- NTPF110N65S3HF
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
Product Details
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 62 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 98 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Ultra Low Gate Charge (Typ. Qg = 62 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 98 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 110 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 240 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Width | 4.9mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 62 nC @ 10 V |
| Length | 10.63mm |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 16.12mm |
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