N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK onsemi NTBS2D7N06M7

RS Stock No.:: 185-8135
Mfr. Part No.:: NTBS2D7N06M7
Brand:: onsemi

N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK onsemi NTBS2D7N06M7

800 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 800)

$6.286

(exc. GST)

$6.915

(inc. GST)

Units	Per unit	Per Reel*
800 - 800	$6.286	$5,028.80
1600 - 2400	$6.129	$4,903.20
3200 +	$6.034	$4,827.20
*price indicative

RS Stock No.:: 185-8135
Mfr. Part No.:: NTBS2D7N06M7
Brand:: onsemi

Technical data sheets

Datasheet NTBS2D7N06M7

Legislation and Compliance

Non Compliant

COO (Country of Origin):: PH

Product Details

Typical RDS(on) = 2.2 m at VGS = 10 V, ID = 80 A
Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A
UIS Capability
These Devices are Pb−Free
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated Tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	176 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	9.65mm
Length	10.67mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	80 nC @ 10 V
Height	4.58mm
Forward Diode Voltage	1.25V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK onsemi NTBS2D7N06M7

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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