Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13

RS Stock No.:: 182-7493
Mfr. Part No.:: DMT6018LDR-13
Brand:: DiodesZetex

Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13

View all MOSFETs

29980 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 10)

$1.261

(exc. GST)

$1.387

(inc. GST)

Units	Per unit	Per Pack*
10 - 2490	$1.261	$12.61
2500 - 4990	$1.239	$12.39
5000 +	$1.21	$12.10

*price indicative

RS Stock No.:: 182-7493
Mfr. Part No.:: DMT6018LDR-13
Brand:: DiodesZetex

Technical data sheets

Datasheet DMT6018LDR-13

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.4 A
Maximum Drain Source Voltage	60 V
Package Type	V-DFN3030
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	26 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.9 W
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	13.9 nC @ 10V
Width	3.05mm
Length	3.05mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Height	0.8mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13

Technical data sheets

Legislation and Compliance

Product Details

Specifications

Related links