Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13
- RS Stock No.:
- 182-6931
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
29980 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 10000)
$0.765
(exc. GST)
$0.841
(inc. GST)
Units | Per unit | Per Reel* |
---|---|---|
10000 - 10000 | $0.765 | $7,650.00 |
20000 - 90000 | $0.746 | $7,460.00 |
100000 + | $0.671 | $6,710.00 |
*price indicative
- RS Stock No.:
- 182-6931
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 11.4 A |
Maximum Drain Source Voltage | 60 V |
Package Type | V-DFN3030 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 26 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1.9 W |
Maximum Gate Source Voltage | ±20 V |
Typical Gate Charge @ Vgs | 13.9 nC @ 10V |
Number of Elements per Chip | 2 |
Maximum Operating Temperature | +150 °C |
Width | 3.05mm |
Length | 3.05mm |
Height | 0.8mm |
Minimum Operating Temperature | -55 °C |
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