P-Channel MOSFET, 6.5 A, 20 V, 8-Pin SO-8 Diodes Inc DMP2040USD-13
- RS Stock No.:
- 182-6908
- Mfr. Part No.:
- DMP2040USD-13
- Brand:
- DiodesZetex
On back order for despatch 11/01/2025, delivery within 10 working days from despatch date.
Price (ex. GST) Each (On a Reel of 2500)
$0.236
(exc. GST)
$0.26
(inc. GST)
Units | Per unit | Per Reel* |
---|---|---|
2500 - 2500 | $0.236 | $590.00 |
5000 - 7500 | $0.23 | $575.00 |
10000 + | $0.226 | $565.00 |
*price indicative
- RS Stock No.:
- 182-6908
- Mfr. Part No.:
- DMP2040USD-13
- Brand:
- DiodesZetex
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. Green Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. Green Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 6.5 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SO-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 52 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.5V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 1.6 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±12 V |
Maximum Operating Temperature | +150 °C |
Width | 3.9mm |
Number of Elements per Chip | 1 |
Length | 4.95mm |
Typical Gate Charge @ Vgs | 19 nC @ 8V |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |
Height | 1.5mm |
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