Vishay Single 1 Type N-Channel MOSFET, 50 A, 60 V TO-220AB IRLZ44PBF
- RS Stock No.:
- 180-8367
- Mfr. Part No.:
- IRLZ44PBF
- Brand:
- Vishay
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- RS Stock No.:
- 180-8367
- Mfr. Part No.:
- IRLZ44PBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Length | 14.4mm | |
| Height | 6.48mm | |
| Width | 10.52mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Length 14.4mm | ||
Height 6.48mm | ||
Width 10.52mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220AB-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 28mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 150W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 175°C
• RDS (on) specified at VGS = 4V and 5V
• Simple drive requirements
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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