Vishay MOSFET SUD19P06-60-GE3
- RS Stock No.:
- 180-7995
- Mfr. Part No.:
- SUD19P06-60-GE3
- Brand:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 180-7995
- Mfr. Part No.:
- SUD19P06-60-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 60mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 38.5W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC converter for LCD displays
• High side switch for full bridge converters
Related links
- Vishay MOSFET SUD19P06-60-GE3
- Vishay SUD23N06-31 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- Vishay MOSFET SI7143DP-T1-GE3
- Vishay SiHF9Z14S Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SIHF9Z14S-GE3
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay Type N 8 A 8-Pin SO-8 SI4534DY-T1-GE3
- Vishay SiS4608DN Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4608DN-T1-GE3
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 SQW44N65EF-GE3