P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
- RS Stock No.:
- 710-3250
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Brand:
- Vishay
320 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 10)
$0.713
(exc. GST)
$0.784
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 740 | $0.713 | $7.13 |
| 750 - 1490 | $0.706 | $7.06 |
| 1500 + | $0.691 | $6.91 |
| *price indicative | ||
- RS Stock No.:
- 710-3250
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 345 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 2.7 nC @ 4.5 V |
| Width | 1.4mm |
| Transistor Material | Si |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |