Dual N-Channel MOSFET, 68 A, 60 V, 8-Pin DFN onsemi NVMFD5C668NLT1G
- RS Stock No.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Brand:
- onsemi
1500 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 10)
$4.132
(exc. GST)
$4.545
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 370 | $4.132 | $41.32 |
| 380 - 740 | $4.027 | $40.27 |
| 750 + | $3.966 | $39.66 |
*price indicative
- RS Stock No.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 68 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 6.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 57.5 W |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 9.8 nC @ 4.5 V |
| Length | 5.1mm |
| Number of Elements per Chip | 2 |
| Width | 6.1mm |
| Height | 1.05mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
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