Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN onsemi NTMFD5C674NLT1G
- RS Stock No.:
- 178-4314
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Brand:
- onsemi
On back order for despatch 24/07/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 1500)
$2.61
(exc. GST)
$2.87
(inc. GST)
| Units | Per unit | Per Reel* |
| 1500 - 1500 | $2.61 | $3,915.00 |
| 3000 - 4500 | $2.544 | $3,816.00 |
| 6000 + | $2.505 | $3,757.50 |
| *price indicative | ||
- RS Stock No.:
- 178-4314
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low on resistance
High current capability
Small footprint (5x6 mm)
Benefits
Minimal conduction losses
Robust load performance
Compact Design
Applications
Motor Control
Synchronous DC to DC Regulator
Power Switches (High Side Driver,Low Side Driver, H-Bridges etc.)
Battery Management and Protection
End Products
Battery Packs
Power Supplies
Rotary Drones
Power Tools
Power Over Ethernet (PoE)
High current capability
Small footprint (5x6 mm)
Benefits
Minimal conduction losses
Robust load performance
Compact Design
Applications
Motor Control
Synchronous DC to DC Regulator
Power Switches (High Side Driver,Low Side Driver, H-Bridges etc.)
Battery Management and Protection
End Products
Battery Packs
Power Supplies
Rotary Drones
Power Tools
Power Over Ethernet (PoE)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 42 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 14.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 37 W |
| Maximum Gate Source Voltage | ±20 V |
| Length | 5.1mm |
| Typical Gate Charge @ Vgs | 4.7 nC @ 4.5 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 2 |
| Width | 6.1mm |
| Height | 1.05mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
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