N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG
- RS Stock No.:
- 178-4317
- Mfr. Part No.:
- NTTFS6H850NTAG
- Brand:
- onsemi
1490 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 1500)
$1.457
(exc. GST)
$1.603
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | $1.457 | $2,185.50 |
| 3000 - 4500 | $1.426 | $2,139.00 |
| 6000 + | $1.399 | $2,098.50 |
*price indicative
- RS Stock No.:
- 178-4317
- Mfr. Part No.:
- NTTFS6H850NTAG
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.
Features
Low On-Resistance
Low Gate Charge
Small Footprint (3x3 mm)
Benefits
Minimizes Conduction Losses
Minimizes Switching Losses
Compact Design
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Synchronous Rectification
End Products
Motor Control
Battery management
Switching Power supplies
Low On-Resistance
Low Gate Charge
Small Footprint (3x3 mm)
Benefits
Minimizes Conduction Losses
Minimizes Switching Losses
Compact Design
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Synchronous Rectification
End Products
Motor Control
Battery management
Switching Power supplies
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 68 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | WDFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 9.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Length | 3.15mm |
| Number of Elements per Chip | 1 |
| Width | 3.15mm |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 0.75mm |
| Forward Diode Voltage | 1.2V |
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