Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

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Subtotal (1 pack of 10 units)*

$14.21

(exc. GST)

$15.63

(inc. GST)

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Units
Per unit
Per Pack*
10 - 740$1.421$14.21
750 - 1490$1.387$13.87
1500 +$1.367$13.67

*price indicative

Packaging Options:
RS Stock No.:
178-3932
Mfr. Part No.:
SiZ348DT-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

16.7W

Typical Gate Charge Qg @ Vgs

12.1nC

Minimum Operating Temperature

150°C

Transistor Configuration

Dual

Maximum Operating Temperature

-55°C

Width

3 mm

Height

0.75mm

Length

3mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
TW
TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching

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