Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 3000 units)*

$1,896.00

(exc. GST)

$2,085.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 12000$0.632$1,896.00
15000 +$0.569$1,707.00

*price indicative

RS Stock No.:
178-3727
Mfr. Part No.:
SQS966ENW-T1_GE3
Brand:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12.1nC

Maximum Power Dissipation Pd

27.8W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.82V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Length

3.15mm

Width

3.15 mm

Height

1.07mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

Related links