Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF
- RS Stock No.:
- 178-0821
- Mfr. Part No.:
- IRFB9N60APBF
- Brand:
- Vishay
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | $2.553 | $127.65 |
| 250 + | $2.298 | $114.90 |
*price indicative
- RS Stock No.:
- 178-0821
- Mfr. Part No.:
- IRFB9N60APBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFB9N60A | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFB9N60A | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRFB9N60A Series Power MOSFET, 600V Drain Source Voltage, 9.2A Continuous Drain Current - IRFB9N60APBF
This power MOSFET is a high-voltage N-channel transistor intended for switching and amplification tasks in industrial electronics. It operates as an enhancement-mode device and is supplied in a TO-220AB through-hole package suitable for heat-sink mounting. The component is designed to function across a broad temperature span, making it appropriate for demanding thermal environments.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 9.2A continuous drain current supports moderate load currents
• 750mΩ Rds(on) reduces conduction losses under load
• 170W maximum dissipation permits high-power handling
• 49nC typical gate charge allows controlled switching dynamics
• 30V gate tolerance supports standard gate-drive voltages
• 9.2A continuous drain current supports moderate load currents
• 750mΩ Rds(on) reduces conduction losses under load
• 170W maximum dissipation permits high-power handling
• 49nC typical gate charge allows controlled switching dynamics
• 30V gate tolerance supports standard gate-drive voltages
Applications
• Suitable for offline power supplies and SMPS
• Ideal for inverter and motor-drive stages
• Used with high-voltage DC-DC converter designs
• Can be used for inductive load switching in industrial equipment
• Used for power-stage prototypes on through-hole development boards
• Ideal for inverter and motor-drive stages
• Used with high-voltage DC-DC converter designs
• Can be used for inductive load switching in industrial equipment
• Used for power-stage prototypes on through-hole development boards
What thermal extremes can the device tolerate in operation?
It is specified to operate from -55°C up to 150°C ambient, accommodating low-temperature starts and elevated thermal stress.
How does the package support mounting and cooling in systems?
The TO-220AB outline permits secure through-hole fixation and direct attachment to a heatsink for improved thermal conduction.
What gate-drive considerations are necessary for switching performance?
Drive voltages should remain within ±30V of gate-to-source
the 49nC gate charge influences required driver current for targeted switching speed.
Is the device suitable for automotive-grade applications?
It is not characterised to automotive standards and therefore is recommended for industrial rather than automotive-certified deployments.
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