Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

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$21.48

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$23.63

(inc. GST)

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Per Pack*
5 - 45$4.296$21.48
50 - 95$4.08$20.40
100 - 495$3.782$18.91
500 - 995$3.478$17.39
1000 +$3.348$16.74

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RS Stock No.:
351-877
Mfr. Part No.:
IGLR65R200D2XUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.2A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TSON-8

Series

IGLR65

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.24Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

34W

Typical Gate Charge Qg @ Vgs

1.26nC

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

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