Microchip DN2540 Type N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243 DN2540N8-G
- RS Stock No.:
- 177-3294
- Mfr. Part No.:
- DN2540N8-G
- Brand:
- Microchip
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$16.07
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 490 | $1.607 | $16.07 |
| 500 - 990 | $1.568 | $15.68 |
| 1000 + | $1.542 | $15.42 |
*price indicative
- RS Stock No.:
- 177-3294
- Mfr. Part No.:
- DN2540N8-G
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-243 | |
| Series | DN2540 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Length | 4.6mm | |
| Width | 2.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-243 | ||
Series DN2540 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Length 4.6mm | ||
Width 2.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features:
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage
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