Toshiba Type N-Channel MOSFET, 10 μA, 250 V Enhancement, 3-Pin TO-252 TK8P25DA,RQ(S

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Subtotal (1 pack of 25 units)*

$14.90

(exc. GST)

$16.40

(inc. GST)

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  • 175 unit(s) ready to ship from another location
  • Plus 600 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Pack*
25 - 25$0.596$14.90
50 - 100$0.585$14.63
125 - 225$0.574$14.35
250 - 600$0.563$14.08
625 +$0.552$13.80

*price indicative

RS Stock No.:
174-4116
Mfr. Part No.:
TK8P25DA,RQ(S
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10μA

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

55W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

16nC

Maximum Operating Temperature

150°C

Length

6.6mm

Width

6.1 mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.

Low drain-source on-resistance

Low leakage current

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