N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK Toshiba TK33S10N1Z

RS Stock No.:: 171-2422
Mfr. Part No.:: TK33S10N1Z
Brand:: Toshiba

N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK Toshiba TK33S10N1Z

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Added

Price (ex. GST) Each (On a Reel of 2000)

$2.862

(exc. GST)

$3.148

(inc. GST)

Units	Per unit	Per Reel*
2000 - 2000	$2.862	$5,724.00
4000 - 6000	$2.842	$5,684.00
8000 +	$2.782	$5,564.00
*price indicative

RS Stock No.:: 171-2422
Mfr. Part No.:: TK33S10N1Z
Brand:: Toshiba

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: JP

Product Details

Automotive
Switching Voltage Regulators
Motor Drivers
Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	9.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	7mm
Length	6.5mm
Typical Gate Charge @ Vgs	28 nC @ 10 V
Height	2.3mm
Forward Diode Voltage	1.2V
Automotive Standard	AEC-Q101

N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK Toshiba TK33S10N1Z

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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