Infineon BSC030N08NS5 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC030N08NS5ATMA1
- RS Stock No.:
- 171-1978
- Mfr. Part No.:
- BSC030N08NS5ATMA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 1240 | $2.631 | $26.31 |
| 1250 - 2490 | $2.563 | $25.63 |
| 2500 + | $2.523 | $25.23 |
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- RS Stock No.:
- 171-1978
- Mfr. Part No.:
- BSC030N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC030N08NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 139W | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC030N08NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 139W | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon BSC030N08NS5 Series MOSFET, 80V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC030N08NS5ATMA1
This n-channel enhancement MOSFET is designed for high-current switching in surface-mount power electronics. It operates across a wide temperature span and manages elevated voltages and currents, making it suitable for demanding thermal and electrical environments. The component integrates into compact board layouts and supports rapid switching for power conversion or motor-drive stages.
Features and Benefits:
• 80V drain-source rating enables higher-voltage rail operation
• 100A continuous drain current allows heavy current handling
• 3mΩ Rds(on) minimises conduction losses in load paths
• 139W power dissipation supports significant thermal throughput
• 61nC total gate charge facilitates fast switching transitions
• 20V gate-source limit permits robust gate-drive margins
• 100A continuous drain current allows heavy current handling
• 3mΩ Rds(on) minimises conduction losses in load paths
• 139W power dissipation supports significant thermal throughput
• 61nC total gate charge facilitates fast switching transitions
• 20V gate-source limit permits robust gate-drive margins
Applications
• Suitable for high-current switch stages in power supplies
• Ideal for synchronous rectification in converters
• Used with motor drivers requiring fast switching
• Can be used for load-switching in telecoms power systems
• Appropriate for compact surface-mount power modules
• Ideal for synchronous rectification in converters
• Used with motor drivers requiring fast switching
• Can be used for load-switching in telecoms power systems
• Appropriate for compact surface-mount power modules
What package type should I allow for in the PCB footprint?
The device is supplied in an eight-pin TDSON package intended for surface-mount placement, so ensure a compatible land pattern and thermal vias if needed.
How tolerant is it to extreme ambient conditions?
The component is rated to operate from -55°C up to 150°C, permitting use in applications with wide thermal variation.
What gate-drive considerations are required for efficient operation?
With a typical gate charge of 61nC and a maximum Vgs of 20V, choose a driver that can deliver sufficient peak current and stay within the gate-voltage limit to optimise switching speed.
How does its forward voltage affect low-voltage designs?
The device exhibits a forward voltage of 0.8V which influences conduction drop calculations in low-voltage, high-current systems and should be included in power-loss estimates.
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