N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC040N08NS5ATMA1
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Brand:
- Infineon
3750 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 10)
$2.658
(exc. GST)
$2.924
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 1240 | $2.658 | $26.58 |
| 1250 - 2490 | $2.593 | $25.93 |
| 2500 + | $2.554 | $25.54 |
*price indicative
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
OptiMOS™ 5 80V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 80V MOSFETs offer the industry’s lowest R DS(on)
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | TDSON |
| Series | OptiMOS™ 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Width | 6.35mm |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V |
| Length | 5.49mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |
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