N-Channel MOSFET, 85 A, 40 V, 8-Pin TDSON Infineon BSC050N04LSGATMA1
- RS Stock No.:
- 171-1928
- Mfr. Part No.:
- BSC050N04LSGATMA1
- Brand:
- Infineon
86490 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 10)
$1.135
(exc. GST)
$1.249
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 1240 | $1.135 | $11.35 |
| 1250 - 2490 | $1.105 | $11.05 |
| 2500 + | $1.09 | $10.90 |
*price indicative
- RS Stock No.:
- 171-1928
- Mfr. Part No.:
- BSC050N04LSGATMA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
Halogen free
Benefits:
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Target Applications:
Synchronous rectification
Isolated DC-DC converters
Motor control
Or-ing switches
Very low on-resistance R DS(on)
Ideal for fast switching applications
Halogen free
Benefits:
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Target Applications:
Synchronous rectification
Isolated DC-DC converters
Motor control
Or-ing switches
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 85 A |
| Maximum Drain Source Voltage | 40 V |
| Series | OptiMOS™ |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 7.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 57 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V |
| Width | 6.35mm |
| Number of Elements per Chip | 1 |
| Length | 5.49mm |
| Height | 1.1mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
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