N-Channel MOSFET, 17 A, 55 V, 3-Pin DPAK Infineon IRLR024NTRPBF

RS Stock No.:: 168-8749
Mfr. Part No.:: IRLR024NTRPBF
Brand:: Infineon

N-Channel MOSFET, 17 A, 55 V, 3-Pin DPAK Infineon IRLR024NTRPBF

This image is representative of the product range

16000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2000)

$0.55

(exc. GST)

$0.61

(inc. GST)

Units	Per unit	Per Reel*
2000 - 8000	$0.55	$1,100.00
10000 +	$0.495	$990.00
*price indicative

RS Stock No.:: 168-8749
Mfr. Part No.:: IRLR024NTRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	110 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Width	6.22mm
Length	6.73mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	15 nC @ 5 V
Height	2.39mm
Minimum Operating Temperature	-55 °C