N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S
- RS Stock No.:
- 168-7950
- Mfr. Part No.:
- TK12E60W,S1VX(S
- Brand:
- Toshiba
25 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$3.948
(exc. GST)
$4.343
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | $3.948 | $197.40 |
| 250 + | $3.553 | $177.65 |
*price indicative
- RS Stock No.:
- 168-7950
- Mfr. Part No.:
- TK12E60W,S1VX(S
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.5 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Series | TK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Width | 4.45mm |
| Length | 10.16mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 15.1mm |
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