Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

$1,985.60

(exc. GST)

$2,184.00

(inc. GST)

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Units
Per unit
Per Reel*
800 - 3200$2.482$1,985.60
4000 +$2.234$1,787.20

*price indicative

RS Stock No.:
168-5948
Mfr. Part No.:
IRF135S203
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

129A

Maximum Drain Source Voltage Vds

135V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

441W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.67mm

Width

4.83 mm

Height

9.65mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

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