N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXYS IXFH110N10P

RS Stock No.:: 168-4469
Mfr. Part No.:: IXFH110N10P
Brand:: IXYS

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXYS IXFH110N10P

Available for back order.

Price (ex. GST) Each (In a Tube of 30)

$10.234

(exc. GST)

$11.257

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$10.234	$307.02
150 +	$9.21	$276.30

*price indicative

RS Stock No.:: 168-4469
Mfr. Part No.:: IXFH110N10P
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	100 V
Series	HiperFET, Polar
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	480 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Width	5.3mm
Length	16.26mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	110 nC @ 10 V
Height	21.46mm
Minimum Operating Temperature	-55 °C