P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 onsemi FDV304P

RS Stock No.:: 166-1711
Mfr. Part No.:: FDV304P
Brand:: onsemi

P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 onsemi FDV304P

This image is representative of the product range

On back order for despatch 17/08/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 3000)

$0.155

(exc. GST)

$0.171

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.155	$465.00
6000 - 9000	$0.151	$453.00
12000 +	$0.149	$447.00

*price indicative

RS Stock No.:: 166-1711
Mfr. Part No.:: FDV304P
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	460 mA
Maximum Drain Source Voltage	25 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.65V
Maximum Power Dissipation	350 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	+8 V
Typical Gate Charge @ Vgs	1.1 nC @ 4.5 V
Length	2.92mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	1.3mm
Transistor Material	Si
Height	0.93mm
Minimum Operating Temperature	-55 °C