onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23
- RS Stock No.:
- 166-2481
- Mfr. Part No.:
- FDC6321C
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
$990.00
(exc. GST)
$1,080.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 3,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.33 | $990.00 |
| 6000 - 9000 | $0.322 | $966.00 |
| 12000 + | $0.317 | $951.00 |
*price indicative
- RS Stock No.:
- 166-2481
- Mfr. Part No.:
- FDC6321C
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Gate Source Voltage Vgs | -8/8 V | |
| Forward Voltage Vf | 0.89V | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Gate Source Voltage Vgs -8/8 V | ||
Forward Voltage Vf 0.89V | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Width 1.7 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Dual N/P-Channel-Channel MOSFET 680 mA 6-Pin SOT-23 FDC6321C
- onsemi Dual N-Channel MOSFET 25 V, 6-Pin SOT-23 FDC6303N
- onsemi P-Channel MOSFET 25 V, 3-Pin SOT-23 FDV304P
- onsemi Dual N-Channel MOSFET 25 V, 6-Pin SOT-363 FDG6303N
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin SOT-523 DMG1013T-7
- onsemi N-Channel MOSFET 25 V, 3-Pin SOT-23 FDV303N
- onsemi Dual N/P-Channel MOSFET 510 mA 6-Pin SOT-23 NDC7001C
- onsemi Dual N/P-Channel-Channel MOSFET 510 mA 6-Pin SOT-23 NDC7001C
