onsemi Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C
- RS Stock No.:
- 166-1651
- Mfr. Part No.:
- FDG6332C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 3000 units)**
$807.00
(exc. GST)
$888.00
(inc. GST)
3000 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $60.00 ex GST
Real time qty checker
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | $0.269 | $807.00 |
| 6000 - 9000 | $0.262 | $786.00 |
| 12000 + | $0.258 | $774.00 |
**price indicative
- RS Stock No.:
- 166-1651
- Mfr. Part No.:
- FDG6332C
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 600 mA, 700 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 442 mΩ, 700 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 1.25mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V | |
| Length | 2mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 600 mA, 700 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 442 mΩ, 700 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 1.25mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V | ||
Length 2mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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