Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 onsemi FDG6332C

RS Stock No.:: 166-1651
Mfr. Part No.:: FDG6332C
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 onsemi FDG6332C

This image is representative of the product range

5980 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.264

(exc. GST)

$0.29

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.264	$792.00
6000 - 9000	$0.257	$771.00
12000 +	$0.253	$759.00

*price indicative

RS Stock No.:: 166-1651
Mfr. Part No.:: FDG6332C
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	600 mA, 700 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	442 mΩ, 700 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.3V
Maximum Power Dissipation	300 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	1.25mm
Transistor Material	Si
Length	2mm
Typical Gate Charge @ Vgs	1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
Height	1mm
Minimum Operating Temperature	-55 °C