Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP Infineon IRF7509TRPBF

RS Stock No.:: 166-0907
Mfr. Part No.:: IRF7509TRPBF
Brand:: Infineon

Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP Infineon IRF7509TRPBF

This image is representative of the product range

1797 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 4000)

$0.449

(exc. GST)

$0.494

(inc. GST)

Units	Per unit	Per Reel*
4000 - 16000	$0.449	$1,796.00
20000 +	$0.404	$1,616.00

*price indicative

RS Stock No.:: 166-0907
Mfr. Part No.:: IRF7509TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2 A, 2.7 A
Maximum Drain Source Voltage	30 V
Package Type	MSOP
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	110 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Width	3mm
Transistor Material	Si
Length	3mm
Typical Gate Charge @ Vgs	7.5 nC @ 10 V, 7.8 nC @ 10 V
Height	0.86mm
Minimum Operating Temperature	-55 °C