Dual N/P-Channel-Channel MOSFET, 1.7 A, 2.4 A, 20 V, 8-Pin MSOP Infineon IRF7507TRPBF

RS Stock No.:: 301-186
Mfr. Part No.:: IRF7507TRPBF
Brand:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.7 A, 2.4 A, 20 V, 8-Pin MSOP Infineon IRF7507TRPBF

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2041 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$1.13

(exc. GST)

$1.24

(inc. GST)

Units	Per unit
1 +	$1.13

RS Stock No.:: 301-186
Mfr. Part No.:: IRF7507TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.7 A, 2.4 A
Maximum Drain Source Voltage	20 V
Series	HEXFET
Package Type	MSOP
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	140 mΩ, 270 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.7V
Minimum Gate Threshold Voltage	0.7V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Length	3mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	3mm
Typical Gate Charge @ Vgs	5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	0.86mm