Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 8-Pin MSOP IRF7509TRPBF

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Packaging Options:
RS Stock No.:
301-192
Distrelec Article No.:
302-84-022
Mfr. Part No.:
IRF7509TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

MSOP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.25W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Width

3 mm

Standards/Approvals

No

Height

0.86mm

Length

3mm

Number of Elements per Chip

2

Automotive Standard

No

Distrelec Product Id

30284022

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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