N-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Diodes Inc DMG3402L-7
- RS Stock No.:
- 165-8325
- Mfr. Part No.:
- DMG3402L-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)**
$417.00
(exc. GST)
$459.00
(inc. GST)
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
---|---|---|
3000 - 3000 | $0.139 | $417.00 |
6000 - 9000 | $0.135 | $405.00 |
12000 + | $0.133 | $399.00 |
**price indicative
- RS Stock No.:
- 165-8325
- Mfr. Part No.:
- DMG3402L-7
- Brand:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 85 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.4V | |
Minimum Gate Threshold Voltage | 0.6V | |
Maximum Power Dissipation | 1.4 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Length | 3mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 11.7 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Width | 1.4mm | |
Height | 1mm | |
Forward Diode Voltage | 1.16V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 11.7 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Height 1mm | ||
Forward Diode Voltage 1.16V | ||
Minimum Operating Temperature -55 °C | ||
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