P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1

RS Stock No.:: 165-8011
Mfr. Part No.:: SPD30P06PGBTMA1
Brand:: Infineon

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1

This image is representative of the product range

7500 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 2500)

$1.213

(exc. GST)

$1.334

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$1.213	$3,032.50
12500 +	$1.091	$2,727.50
*price indicative

RS Stock No.:: 165-8011
Mfr. Part No.:: SPD30P06PGBTMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: CN

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	60 V
Series	SIPMOS
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	32 nC @ 10 V
Length	6.73mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	6.22mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.7V
Height	2.41mm