P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC Infineon IRF6216PBF

RS Stock No.:: 165-7563
Mfr. Part No.:: IRF6216PBF
Brand:: Infineon

P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC Infineon IRF6216PBF

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Tube of 95)

$1.826

(exc. GST)

$2.009

(inc. GST)

Units	Per unit	Per Tube*
95 +	$1.826	$173.47

*price indicative

RS Stock No.:: 165-7563
Mfr. Part No.:: IRF6216PBF
Brand:: Infineon

IRF6216PbF, HEXFET Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2.2 A
Maximum Drain Source Voltage	150 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	4mm
Transistor Material	Si
Length	5mm
Typical Gate Charge @ Vgs	33 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.5mm

P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC Infineon IRF6216PBF

P-Channel Power MOSFET 100V to 150V, Infineon

Related links